Fuse element programming circuit and method

ABSTRACT

In one embodiment, a programming circuit is configured to form a programming current for a silicide fuse element by using a non-silicide programming element.

BACKGROUND OF THE INVENTION

The present invention relates, in general, to electronics, and moreparticularly, to semiconductors, structures thereof, and methods offorming semiconductor devices.

In the past, the semiconductor industry utilized various circuits andmethods to form one-time programmable (OTP) memory circuits. Some ofthese memory circuits utilized a programmable resistor that could beprogrammed to an open circuit or remain as a resistive circuit todetermine whether the output of a memory cell was a logical one or zero.Prior methods of programming a programmable resistor generally involvedconducting a current through the programmable resistor to cause an opencircuit or a change in resistance. The programming current often wasformed by a current through another resistor that had similarconstruction as the memory element. Other implementations used a fixedexternal reference current to form the programming current. Programmingthe programmable element often resulted in under-programming whichadversely affected yields and costs or over-programming which adverselyaffected yields or the reliability of the final circuit. In someapplications, these reference circuits required a large area of the diewhich increased the costs. In some applications the programming currentcould vary as a temperature varied thereby causing unreliableprogramming which could result in increased costs or lower reliability.

Accordingly, it is desirable to have a circuit and method that can morereliably program the programmable element, and/or that providescompensation for temperature and/or process variations, and/or thatprovides compensation for applied stimulus.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 schematically illustrates an example of an embodiment of aportion of a one-time programmable (OTP) memory system in accordancewith the present invention;

FIG. 2 schematically illustrates an example of an embodiment of aportion of a one-time programmable (OTP) system that is an alternateembodiment of the system of FIG. 1 in accordance with the presentinvention;

FIG. 3 illustrates an isometric view of an example of a portion of anembodiment of a programming element and a fuse element of the circuit ofFIG. 2 at an intermediate stage of formation in accordance with thepresent invention;

FIG. 4 illustrates another stage in a method of forming the elements ofFIG. 4 in accordance with the present invention;

FIG. 5 illustrates the elements of FIG. 4 at various stages during theprogramming of a fuse element of FIG. 2 in accordance with the presentinvention;

FIG. 6 is a graph having a plot that illustrates an example of anembodiment of a value of a programming current in accordance with thepresent invention;

FIG. 7 illustrates an isometric view of an example of a portion of analternate embodiment of some of the elements of FIG. 4 in accordancewith the present invention; and

FIG. 8 illustrates an enlarged plan view of a semiconductor device thatincludes the circuit or system of FIG. 1 or FIG. 2 in accordance withthe present invention.

For simplicity and clarity of the illustration(s), elements in thefigures are not necessarily to scale, some of the elements may beexaggerated for illustrative purposes, and the same reference numbers indifferent figures denote the same elements, unless stated otherwise.Additionally, descriptions and details of well-known steps and elementsare omitted for simplicity of the description. As used herein currentcarrying element or current carrying electrode means an element of adevice that carries current through the device such as a source or adrain of an MOS transistor or an emitter or a collector of a bipolartransistor or a cathode or anode of a diode, and a control element orcontrol electrode means an element of the device that controls currentthrough the device such as a gate of an MOS transistor or a base of abipolar transistor. Additionally, one current carrying element my acarry current in one direction through a device, such as carry currententering the device, and a second current carrying element may carrycurrent in an opposite direction through the device, such as carrycurrent leaving the device. Although the devices are explained herein ascertain N-channel or P-Channel devices, or certain N-type or P-typedoped regions, a person of ordinary skill in the art will appreciatethat complementary devices are also possible in accordance with thepresent invention. One of ordinary skill in the art understands that theconductivity type refers to the mechanism through which conductionoccurs such as through conduction of holes or electrons, therefore, andthat conductivity type does not refer to the doping concentration butthe doping type, such as P-type or N-type. It will be appreciated bythose skilled in the art that the words during, while, and when as usedherein relating to circuit operation are not exact terms that mean anaction takes place instantly upon an initiating action but that theremay be some small but reasonable delay(s), such as various propagationdelays, between the reaction that is initiated by the initial action.Additionally, the term while means that a certain action occurs at leastwithin some portion of a duration of the initiating action. The use ofthe word approximately or substantially means that a value of an elementhas a parameter that is expected to be close to a stated value orposition. However, as is well known in the art there are always minorvariances that prevent the values or positions from being exactly asstated. It is well established in the art that variances of up to atleast ten per cent (10%) (and up to twenty per cent (20%) forsemiconductor doping concentrations) are reasonable variances from theideal goal of exactly as described. When used in reference to a state ofa signal, the term “asserted” means an active state of the signal andthe term “negated” means an inactive state of the signal. The actualvoltage value or logic state (such as a “1” or a “0”) of the signaldepends on whether positive or negative logic is used. Thus, assertedcan be either a high voltage or a high logic or a low voltage or lowlogic depending on whether positive or negative logic is used andnegated may be either a low voltage or low state or a high voltage orhigh logic depending on whether positive or negative logic is used.Herein, a positive logic convention is used, but those skilled in theart understand that a negative logic convention could also be used. Theterms first, second, third and the like in the claims or/and in theDetailed Description of the Drawings, as used in a portion of a name ofan element are used for distinguishing between similar elements and notnecessarily for describing a sequence, either temporally, spatially, inranking or in any other manner. It is to be understood that the terms soused are interchangeable under appropriate circumstances and that theembodiments described herein are capable of operation in other sequencesthan described or illustrated herein. For clarity of the drawings, dopedregions of device structures are illustrated as having generallystraight line edges and precise angular corners. However, those skilledin the art understand that due to the diffusion and activation ofdopants the edges of doped regions generally may not be straight linesand the corners may not be precise angles.

DETAILED DESCRIPTION OF THE DRAWINGS

FIG. 1 schematically illustrates an example of an embodiment of aportion of a one-time programmable (OTP) memory system 100. System 100includes a plurality of memory cells that are illustrated in a generalmanner by memory cells 12 and 13. Cells 12 and 13 include respectivefuse elements 15 and 19 that are configured to be programmed todetermine a logical state of the respective cells 12 and 13. Elements 15and 19 are programmed by either causing a change or not causing a changein the resistance of elements 15 and 19. Cells 12 and 13 may alsotypically include programming select switches or select switches, suchas the switches illustrated by example transistors 16 and 20. As is wellunderstood by those skilled in the art, cells 12 and 13 typicallyinclude various other elements that are utilized to read or determinethe state programmed into cells 12 and 13 such as respective readcontrol circuits 17 and 21 that determines the state of or resistance ofrespective fuse elements 15 and 19. Cells 12 and 13 may also containvarious other logical or passive elements, such as for example readselect lines 23 and 24. Circuit 125 is configured to form a programmingcurrent 39 to program the state of elements 15 and 19 during aprogramming operation of system 100.

FIG. 2 schematically illustrates an example of an embodiment of aportion of an OTP memory system 10 that is an alternate embodiment ofsystem 100. System 10 includes a programming circuit 25 that is analternate embodiment of circuit 125. Circuit 25 is substantially similarto and forms current 39 to function similarly to circuit 125 but mayhave different internal circuitry than circuit 125.

Circuit 25 typically receives power for operating circuit 25 between avoltage input 70 and a voltage return 71. Return 71 may be connected toa common voltage reference such as a ground or other common referencevalue. The operating power received on input 70 may also be utilized foroperating cells 12 and 13. Circuit 25 generally includes a controlcircuit 43 that is utilized to initiate programming of elements 15 and19 and to select which memory cells will be programmed. In someembodiments, circuit 43 may receive a programming select signal on acontrol input 73 and may include outputs for select signals 18 and 22.In an embodiment, circuit 25 is configured to form a control current 27and to form programming current 39 to be proportional to current 27.Circuit 25 includes a programming element 26 that is configured tocontrol the value of current 27, thus, the value of current 39. In otherembodiments, circuit 25 may be configured to form current 39 directly,for example using current 27 or other means of using element 26 tocontrol the value of current 39. In some embodiments, the peak value ofcurrent 39 may be controlled.

In one embodiment, circuit 25 includes an amplifier 31 that receives areference voltage from a reference generator 30 and controls atransistor 32 to form a voltage at a node 33 that is representative ofthe reference voltage from reference 30. An embodiment of circuit 25includes a current mirror that includes transistors 36 and 37. Current27 flows through transistor 36 which causes transistor 37 to form acurrent 38 to be proportional to the value of current 27 when current 38has a low resistance conduction path to return 71. As is known to thoseskilled in the art, the proportionality between current 27 and current38 is representative of the proportionally of the active areas oftransistors 36 and 37.

When circuit 25 is not programming the memory cells, such as cells 12and 13, the select switches, such as for example transistors 16 and 20,are disabled and a deselect switch, such as a transistor 42 for example,of circuit 25 is enabled which causes current 38 to flow throughtransistor 42 and not flow to the memory cells such as cells 12 and 13.Thus, current 39 is substantially zero. In some embodiments, circuit 25may include an optional reference enable signal 29 to enable Ref. 30only during a programming operation and not during other operations.This assists in reducing the power dissipation of circuit 25 and system10 and increases reliability.

FIG. 3 illustrates an isometric view of an example of a portion of anembodiment of a programming element 45 that is similar to programmingelement 26 and a fuse element 50 that is similar to one or both of fuseelements 15 and 19. FIG. 3 illustrates elements 45 and 50 at anintermediate stage in a method of forming elements 45 and 50. Element 45typically is formed to include a body region 49 that is connected tocontact areas 47 and 48 that are disposed at opposite ends of bodyregion 49. Region 49 and areas 47 and 48 form a body layer 46 of element45. Element 50 similarly includes a body region 54 that is connected tocontact areas 52 and 53 that are disposed at opposite ends of bodyregion 54. Region 54 and areas 52 and 53 form a body layer 51 of element50. Body regions 49 and 54 typically are formed from a semiconductormaterial that has a substantially equal resistivity such that theresistivity of regions 49 and 54 are substantially equal. Areas 47 and48 and 52 and 53 typically are formed from the same material as regions49 to 54. A non-limiting example embodiment includes forming a layer ofpolysilicon or doped polysilicon as the semiconductor material andpatterning the polysilicon to form body regions 49 and 54 and/or bodylayers 46 and 51. Thus, the thickness of regions 49 and 54 may besubstantially similar in some embodiments. In one embodiment, theresistivity of the semiconductor material may be approximately 5E-3 to9E-3 ohm-cm.

Those skilled in the art will appreciate that the total resistance oflayers 46 and 51 usually is dominated by the resistance of respectiveregions 49 and 54 since regions 49 and 54 usually have a smallercross-sectional area than, and in some embodiments may be longer than,respective areas 47/48 and 52/53.

FIG. 4 illustrates another stage in a method of forming elements 45 and50. A silicide material 58 is formed at least on body region 54 ofelement 50. The material used for silicide material 58 may be any ofvariety of well-known materials such as cobalt, titanium, or othersuitable materials. In other embodiments, the silicide material may alsobe formed on areas 52 and 53 as illustrated by silicide material 59 and60. For the embodiments that include material 59 and 60, material 59 and60 may be formed simultaneously with material 58. Material 58, oralternately materials 58-60, forms a silicide layer 57 on thesemiconductor material of layer 51 of element 50. Element 50 may beannealed to form layer 57 as a silicide alloy. In some embodiments, thesilicide material may form an alloy with a small portion of thesemiconductor material of layer 51 such as for example as is illustratedin a general manner by a dashed line 61. Those skilled in the art willappreciate that forming the silicide material on element 50 may reducethe thickness of the semiconductor material of body layer 51 since aportion of the semiconductor material may be used in forming thesilicide alloy as illustrated by dashed line 61. Material 58 has a muchlower resistivity and overall lower resistance than the material ofregion 54.

However, silicide material is not formed on at least body region 49 ofelement 45. In some embodiments, silicide material 66 and 67 may beformed on respective areas 47 and 48 to assist in making a lowresistance contact to element 45. In other embodiments, silicidematerial 66 and 67 may be omitted, and in some embodiments silicidematerial may not be formed on any of element 45 such that layer 46 issubstantially devoid of a silicide material. For the embodiments thatinclude material 66 and 67, material 66 and 67 may be formed at the sametime as material 58 and/or 58-60. Material 66 and 67 typically forms analloy with a small portion of the semiconductor material of areas 47 and48 similarly to the material of layer 57, such as illustrated by dashedlines 68 and 69. Therefore, the resistivity of region 49 and element 45remains substantially representative of the resistivity of respectiveregion 54 and layer 51 of element 50. By “representative of theresistivity” it is meant that the resistivity of the two regions orlayers are substantially equally effected by variations in themanufacturing processes. For example, it is believed that variations inmaterial properties or element dimensions or other process variationseffect both elements substantially equally. Those skilled in the artwill appreciate that even though the silicide material may cause a smallreduction in the thickness of the material of layer 51, it is believedthat the resistivity of body region 49 of element 45 remainssubstantially representative of the resistivity of body region 54 ofelement 50. For example, in one embodiment the resistivity of regions 49and 54 was approximately 5E-3 to 9E-3 ohm-cm and the resistivity ofelement 50 including layer 57 was approximately 1E-4 to 2.5E-4 ohm-cm.

Referring back to FIG. 2, element 26 is formed substantially similar toelement 45 and elements 15 and 19 are formed substantially similar toelement 50. In order to program one of the memory cells, one of selectlines 18 or 22 is asserted to select the corresponding one of cells 12and 13, and transistor 42 is disabled. Assume for this example that cell12 is to be programmed and signal 18 is asserted to enable transistor16. Disabling transistor 42 allows current 38 to flow to the memorycells as current 39. Because transistor 16 is enabled, current 39 flowsthrough fuse element 15. Circuit 25 is configured to control the valueof current 39 to increase the resistivity and total resistance ofelement 15.

FIG. 5 illustrates elements 45 and 50 at various stages during theprogramming of a fuse element that is illustrated by element 50, such asfor example element 15 and/or element 19.

FIG. 6 is a graph having a plot 80 that illustrates an example of anembodiment of a value of current 39. The abscissa indicates time and theordinate indicates increasing value of the illustrated signal. Adiscontinuity in plot 80 indicates a non-uniformity in the time scalefor the clarity of the drawings. This description has references to FIG.2 and FIGS. 5-6. Assume that at a time T0, transistor 42 is enabled andcurrent 39 is substantially zero. At a time T1, circuit 25 asserts oneof signals 18 or 22 to begin programming the corresponding fuse element15 or 19, and then disables transistor 42. Thus, current 38 flows tocell 12 or 13 as current 39 and through the selected one of transistors16 or 20. Assuming that cell 12 is selected, current 39 flows throughelement 15 and transistor 16. Referring to FIG. 5, where element 50 isrepresentative of element 15, current 39 flows through element 15 asillustrated by arrows in FIG. 5. As a result, a voltage is formed acrosselement 50 as illustrated by an arrow 85 representing the voltagepotential. Circuit 25 is configured to control the value of current 39to a value that causes the resistance of element 15 to increase. Anembodiment includes that circuit 25 is configured to control the valueof current 39 to cause electro-migration of at least some of thesilicide material away from region 54 thereby increasing the resistivityand total resistance of element 15. Another embodiment may include thatcircuit 25 is configured to control the value of current 39 to causeelectro-migration of at least some of the dopant material and increasethe resistance of element 15. Another embodiment may include thatcircuit 25 is configured to control the value of current 39 to causeelectro-migration of at least some of the dopant material away fromregion 54, or in some embodiments away from at least a portion of region54, thereby increasing the resistivity and total resistance of element15.

Since layer 57 has a lower resistivity and resistance than layer 51,current 39 initially flows primarily through the silicide material oflayer 57. In some embodiments the resistance of element 26 is formed togenerate a much larger current density in layer 57 than in element 26.For embodiments that include the current mirror of transistors 36 and37, the current mirror may assist in forming the two different currentdensities. For example, between time T1 and T2, current 39 flowsprimarily through layer 57 and causes heating of layer 57. The heatingcauses the resistance of layer 57 to increase and current 39 maydecrease in response as illustrated between times T2-T3. Heatingcontinues in element 50 and current 39 may increase such as illustratedbetween times T3-T4. Silicide material 58 may diffuse into in the bodyregion of element 50. Silicide material 50, or in some embodiments atleast a portion thereof, migrates to the more positive end of element 50and accumulates with silicide material 60 in or on area 53 of element50. In some embodiments, some of silicide material 59 may diffuse into aportion of area 52. At least a portion of silicide material 59 alsobegins to migrate from over area 52 toward the more positive end and isaccumulated with material 60 in or on area 53 of element 50. In someembodiments, some of the silicide material may eventually accumulatenear area 53, such as for example overly a small portion of region 54,as illustrated in FIG. 5 by a curved line.

From time T4 to T5, the value of current 39 is controlled by element 26,for example by the resistance of element 26. An embodiment may includecontrolling the peak value of current 39. Region 49 is formed to resultin a value of current 39 that is sufficient to form a current density inregion 54 that causes the electro-migration. The current density forms alocal electric field in region 54 that is large enough to cause theelectro-migration. Additionally, the value of current 39 is responsiveto changes in the cross-sectional area of region 49. Thus, if thecross-sectional area changes, the current value changes responsively. Inan embodiment, circuit 25 is configured to control the value of current39 to a value that causes the resistance of element 15 to increasewithout forming a void in region 54. In an embodiment, the value ofcurrent 39 is controlled by element 26 so that the current density inregion 54 forms a local electric field in body region 54 to cause theelectro-migration of both the silicide material, and/or in someembodiments the dopants such as for example the atoms of the dopantmaterial, toward area 53. In one example embodiment, the resistance ofelement 26 is formed to control the value of current 39 to form a localelectric field of approximately 1E3 to 10E3 volts/cm in region 54. Thevalue, and in some embodiments the peak value, of current 39 is selectedto cause the migration of the silicide material, and/or in someembodiments the dopants, and to leave the semiconductor material in bodyregion 54. An embodiment may include that the circuit 25 is configuredto form the value of current 39 and the current density in region 54 toa value that forms substantially a void in layer 57 (FIG. 4) andsubstantially not a void in region 54. In one embodiment, circuit 25 isconfigured to form the value of current 39 to cause substantially a voidin a portion of silicide material 58 of element 15 not a void in region54. In one embodiment, substantially all of material 58 migrates towardarea 53 and accumulates with material 60. The resistance of element 26is chosen such that the value of current 39 is high enough to set acurrent density in region 54 to cause diffusion of the silicide atoms inlayer 57 into the body region of element 50. An embodiment may includeforming body region 49 to have a different cross-sectional area thatbody region 54 so that body region 26 may more accurately set the valueof current 39 to cause the electro-migration. Another embodiment mayinclude that the cross-sectional area of region 49 is larger than thecross sectional area of region 54. It is believed that theelectro-migration causes the resistivity of region 54 to increaseseveral orders of magnitude over the resistivity just prior toprogramming. As result of the electro-migration, current 39 then flowsprimarily through region 54, and the resistivity of region 54substantially determines the resistivity and total resistance of element15. Also as a result of the electro-migration, current 39 forms bodyregion 54 to be substantially a non-silicide body region.

Prior reference elements that are formed from the same material as thefuse elements form a programming current that forms a very high currentdensity, such as approximately 1E7 to approximately 1E8 amps/cm² in thebody of the fuse element. Since prior reference elements and fuseelements were silicided, the silicide portion of the reference elementsdominated the behavior of the current and of the reference elements.Also, it is believed that the current was not primarily responsive tothe body portion of the reference element.

As the resistance of element 15 increases, the voltage at node 40 ofcircuit 25 increases which causes transistor 37 to conduct less currentthereby reducing the value of current 39, such as illustrated betweentimes T5 and T7 in FIG. 6. Because current 39 decreased, less currentflows through element 15. In an embodiment, circuit 43 may be configuredto terminate forming current 39 after a fixed time interval such as byterminating current 39 after the time interval. For example, after thetime interval the deselect switch, such as transistor 42 for example,may be enabled, and the switch represented by transistor 16 may bedisabled, to cause current 38 to flow through the deselect switch, forexample as illustrated at a time T6. The time interval may be selectedto allow sufficient time to increase the total resistance of element 15.In an embodiment, the time interval is selected to cause the migrationof the silicide material. An embodiment may include that the lower valueof current 39 substantially terminates the programming of element 15. Anembodiment may include configuring circuit 25 to form programmingcurrent 39 with a first value, such as at time T4 for example, toincrease the resistivity of element 15 and to decrease the value ofcurrent 39 to a second value, such as between times T5-T6 for example,responsively to forming the increased resistivity wherein the decreasedvalue of current 39 is greater than zero. In other embodiments circuit25 may be configured to monitor the value of current 39 and terminateprogramming once current 39 decreases from a first value, for example avalue between T4 and just before T5, to a second value that is lowerthan the first value, such as a value between T5 and T7, indicating thatthe resistance of element 15 has increased. Those skilled in the artwill appreciate that plot 80 is not to scale and includes adiscontinuity between time T4-T5. In one embodiment, the time from T1-T4had a magnitude in the nano-second range, the time from T4-T5 was amagnitude of micro-seconds or hundreds of micro-seconds, and the timefrom T5-T6 was a magnitude of hundreds of micro-seconds tomilli-seconds.

Because the resistivity of body region 49 of element 26 is substantiallyrepresentative of the resistivity of body region 54 of programmingelements 15 and 19, the value of programming current 39 will trackchanges in elements 15 and 19 due to manufacturing or process variationsbecause the resistivity of the body region of element 26 will change asthe value of the resistivity of the body regions of elements 15 and 19change. An embodiment may include forming body regions 49 and 54 to havesubstantially similar widths. It is believed that the substantiallysimilar widths assist in regions 49 and 54 having substantially similarvariations due to process variations and/or temperature variations.Additionally, the programming is configured to adjust for ambienttemperature variations since temperature changes that affect elements 15and 19 also affect element 26 and the value of element 26 sets the valueof programming current 39.

FIG. 7 illustrates an isometric view of an example of a portion of analternate embodiment of elements 26 and or 45. In an embodiment, element26 may be formed to include a body region 49 that has a plurality ofbody region sections 75. Typically, sections 75 may be formed as a firstplurality of parallel sections that are connected in series with asecond plurality of parallel sections. The first and second parallelsections are connected together. In one embodiment, they may beconnected together at a common contact area 76. In other embodiments,they may be connected together by conductors (not shown) that extendbetween the two sets of sections. The resistivity and total resistanceof the plurality of sections 75 are substantially equal to theresistivity and total resistance of region 49. The plurality of sections75 assists in reducing the variation in total resistance of element 26due to process variations.

In order to assist in providing the functionality described herein, afirst terminal of element 26 is connected to return 71 and a secondterminal of element 26 is connected to node 33. Node 33 is commonlyconnected to a source of transistor 32 and an inverting input ofamplifier 31. A non-inverting input of amplifier 31 is connected to anoutput of ref 30. An output of amplifier 31 is connected to a gate oftransistor 32. A drain of transistor 32 is commonly connected to a drainof transistor 36, a gate of transistor 36, and a gate of transistor 37.A source of transistor 36 is connected to input 70 and to a source oftransistor 37. A drain of transistor 37 is commonly connected to node 40and to a drain of transistor 42. A source of transistor 42 is connectedto return 71. A gate of transistor 42 is connected to an enable outputof circuit 43. Node 40 is also connected to a first terminal of element15 and a first terminal of element 19. A second terminal of element 15is connected to a drain of transistor 16 which has a source connected toreturn 71. A second terminal of element 19 is connected to a drain oftransistor 20 which has a source connected to return 71. A gate oftransistor 16 is connected to select line 18 from circuit 43. A gate oftransistor 20 is connected to select line 22 of circuit 43.

FIG. 8 illustrates an enlarged plan view of a portion of an embodimentof a semiconductor device or integrated circuit 95 that is formed on asemiconductor die 96. Circuit 25 and/or cells 12 and 13 and/or system 10may be formed on die 96. Die 96 may also include other circuits that arenot shown in FIG. 8 for simplicity of the drawing. Circuit 25 and deviceor integrated circuit 95 are formed on die 96 by semiconductormanufacturing techniques that are well known to those skilled in theart.

From the descriptions herein one skilled in the art can determinate thataccording to one embodiment, a circuit for programming a fuse elementmay comprise:

a memory cell, such as cell 12 for example, having a fuse element thatincludes a first semiconductor material, for example a dopedsemiconductor material, body region, for example region 54, and asilicide layer, for example layer 57 or material 58;

a programming circuit, for example circuit 25 or 125, configured to forma programming current, such as for example current 39, to program thefuse element; and

a programming element, such as element 45 for example, configured tocontrol a value of the programming current, the programming elementhaving a second semiconductor material body region, for example region49, but not a silicide layer.

An embodiment may include that a resistivity of the programming elementis substantially representative of a resistivity of the firstsemiconductor material body region of the fuse element.

In an embodiment, the programming element may include a dopedpolysilicon body region that is substantially devoid of a silicidematerial.

Another embodiment may include that the programming circuit may includea means for forming a value of the programming current to causeelectro-migration of silicide material overlying a portion of the firstsemiconductor material body region of the fuse element and increasing aresistivity of the fuse element.

In one embodiment, the programming element may include a plurality ofcoupled sections wherein each section of the plurality of sections issubstantially equal.

An embodiment may include that the first and second semiconductormaterial body regions may include first and second polysilicon bodyregions.

In an embodiment, a resistivity of the programming element may besubstantially representative of a resistivity of the first semiconductormaterial body region of the fuse element prior to alloying the silicidelayer with the first material semiconductor body region.

Those skilled in the art will appreciate that an embodied of a method offorming a programming circuit for a fuse element may comprise:

forming a fuse element having a first semiconductor layer (such as layer51 for example) and a silicide layer (for example one of or alternatelyall of layers 58-60) wherein the first semiconductor layer has a bodyregion (such as region 54 for example) having a first resistivity, andthe silicide layer has a second resistivity; and

configuring a programming circuit to control a value of a programmingcurrent (such as current 39 for example) through the fuse elementresponsively to one of a cross-sectional area of a body region of aprogramming element or alternately a resistance of the programmingelement and not to current through a silicide material wherein the bodyregion of the programming element is formed from a semiconductormaterial and wherein the value of the programming current causes anincrease of a resistivity of the fuse element.

An embodiment of the method may include forming the configuring aprogramming circuit to control the value of the programming current tothe first resistivity.

Another embodiment may include forming the body region of theprogramming element with a fourth resistivity that is substantiallyequal to the first resistivity.

An embodiment may include forming the programming current to notincrease the fourth resistivity.

Those skilled in the art will appreciate that an embodied of a method offorming a programming circuit for a fuse element may comprise:

forming a fuse element, such as element 50 for example, having a firstsemiconductor layer for example layer 51, and a silicide layer, such asfor example layer 57 or material 58, wherein the first semiconductorlayer has a first resistivity and the silicide layer has a secondresistivity; and

configuring the programming circuit, such as circuit 25 or 125 forexample, to control a value of a programming current through the fuseelement using a programming element, such as for example element 45,having a third resistivity that is greater than the second resistivity.

An embodiment of the method may include forming the programming elementto include a second semiconductor layer wherein the programming elementis substantially devoid of a silicide layer and wherein the secondsemiconductor layer has substantially the first resistivity.

Another embodiment of the method may include configuring the controlcircuit to form the programming current to cause substantially a void inthe silicide layer but not in the first semiconductor layer.

In an embodiment, the method may include configuring the control circuitto form the programming current to increase the first resistivity to afourth resistivity and substantially not form a void in the firstsemiconductor layer.

Another embodiment may include configuring the control circuit to formthe programming current with a value to increase the first resistivityto a fourth resistivity and to decrease the programming current to asecond value responsively to forming the fourth resistivity wherein thesecond value is greater than zero.

Those skilled in the art will also appreciate that an embodied of amethod of forming a programming circuit for a fuse element may comprise:

forming a fuse element, such as element 15 or element 50 for example,having a resistance, a first semiconductor layer, such as layer 51 forexample, and a silicide layer, such as layer 57 or material 58, whereinthe first semiconductor layer has a body region, such as for exampleregion 54, having a body resistivity that is substantially a firstresistivity, and the silicide layer has a second resistivity that isless than the first resistivity; and

configuring a programming circuit, for example circuit 125 or 25, tocontrol a value of a programming current, such as current 39 forexample, through the fuse element responsively to a body region, region49 for example, of a programming element, element 45 for example,wherein the body region is formed from a semiconductor material, such aspolysilicon or doped polysilicon for example, and wherein the value ofthe programming current or alternately the programming current increasesthe resistance of the fuse element.

Another embodiment of the method may include forming the programmingelement with a third resistivity that is substantially equal to thefirst resistivity.

An embodiment of the method may include forming at least the body regionof the programming element substantially devoid of a silicide material.

In an embodiment, the method may include forming the body region of theprogramming element from the semiconductor material that issubstantially devoid of a silicide material.

A embodiment of the method may include configuring the programmingcircuit to cause electro-migration of silicide material and increase theresistance of the fuse element.

Another embodiment may include configuring the programming circuit toform the value of the programming current to result in a current densityin the body region of the fuse element that causes electro-migration ofsilicide material.

An embodiment of the method may include configuring the programmingcircuit to control the value of the programming current to result in acurrent density in the body region of the fuse element that causeselectro-migration of dopants in the body region of the fuse element.

Another embodiment may include configuring the programming circuit toform the value of the programming current to result in a current densityof approximately 1E7 to 1E8 amps/cm² in the body region of the fuseelement.

In view of all of the above, it is evident that a novel device andmethod is disclosed. Included, among other features, is forming aprogramming element without a silicide layer to control a value of aprogramming current through a silicide fuse element. In one embodiment,the programming circuit may be configured to increase a resistivity ofthe fuse element by removing at least a portion of a silicide materialfrom a body region of the fuse element without causing an open circuitin a semiconductor material layer of the body region. Using aprogramming element that has a resistivity that is substantially similarto a resistivity of the semiconductor material layer of the body regionof the fuse element assists in providing well controlled programming ofthe fuse elements and increases the final fuse resistance and yield andthe reliability.

While the subject matter of the descriptions are described with specificpreferred embodiments and example embodiments, the foregoing drawingsand descriptions thereof depict only typical and examples of embodimentsof the subject matter and are not therefore to be considered to belimiting of its scope, it is evident that many alternatives andvariations will be apparent to those skilled in the art. As will beappreciated by those skilled in the art, the example form of system 10and circuit 25 are used as a vehicle to explain the programming functionof increasing the resistivity without forming an open circuit in thefuse element. The subject matter has been described for a particularP-channel and N-channel transistor devices, although the method isdirectly applicable to bipolar transistors, as well as to other MOS, andother transistor devices.

As the claims hereinafter reflect, inventive aspects may lie in lessthan all features of a single foregoing disclosed embodiment. Thus, thehereinafter expressed claims are hereby expressly incorporated into thisDetailed Description of the Drawings, with each claim standing on itsown as a separate embodiment of an invention. Furthermore, while someembodiments described herein include some but not other featuresincluded in other embodiments, combinations of features of differentembodiments are meant to be within the scope of the invention, and formdifferent embodiments, as would be understood by those skilled in theart.

1. A circuit for programming a fuse element comprising: a memory cellhaving a fuse element that includes a first semiconductor material bodyregion and a silicide layer; a programming circuit configured to form aprogramming current to program the fuse element; and a programmingelement configured to control a value of the programming current, theprogramming element having a second semiconductor material body regionbut not a silicide layer.
 2. The circuit of claim 1 wherein aresistivity of the programming element is substantially representativeof a resistivity of the first semiconductor material body region of thefuse element.
 3. The circuit of claim 1 wherein the programming elementincludes a doped polysilicon body region that is substantially devoid ofa silicide material.
 4. The circuit of claim 1 wherein the programmingcircuit includes a means for forming a value of the programming currentto cause electro-migration of silicide material overlying a portion ofthe first semiconductor material body region of the fuse element andincreasing a resistivity of the fuse element.
 5. The circuit of claim 1wherein the programming element includes a plurality of coupled sectionswherein each section of the plurality of sections is substantiallyequal.
 6. The circuit of claim 1 wherein the first and secondsemiconductor material body regions includes first and secondpolysilicon body regions.
 7. The circuit of claim 1 wherein aresistivity of the programming element is substantially representativeof a resistivity of the first semiconductor material body region of thefuse element prior to alloying the silicide layer with the firstmaterial semiconductor body region.
 8. A method of forming a programmingcircuit for a fuse element comprising: forming a fuse element having afirst semiconductor layer and a silicide layer wherein the firstsemiconductor layer has a first resistivity and the silicide layer has asecond resistivity; and configuring the programming circuit to control avalue of a programming current through the fuse element using aprogramming element having a third resistivity that is substantially thefirst resistivity.
 9. The method of claim 8 further including formingthe programming element to include a second semiconductor layer whereinthe programming element is substantially devoid of a silicide layer. 10.The method of claim 8 wherein configuring the programming circuit tocontrol the value of the programming current includes configuring thecontrol circuit to form the programming current to cause substantially avoid in the silicide layer but not in the first semiconductor layer. 11.The method of claim 10 further including configuring the control circuitto form the programming current to increase the first resistivity to afourth resistivity and substantially not form a void in the firstsemiconductor layer.
 12. The method of claim 8 wherein configuring theprogramming circuit to control the value of the programming currentincludes configuring the control circuit to form the programming currentwith a value to increase the first resistivity to a fourth resistivityand to decrease the programming current to a second value responsivelyto forming the fourth resistivity wherein the second value is greaterthan zero.
 13. A method of forming an OTP programming circuitcomprising: forming a fuse element having a resistance, a firstsemiconductor layer formed from a semiconductor material, and a silicidelayer wherein the first semiconductor layer has a body region having abody resistivity that is substantially a first resistivity, and thesilicide layer has a second resistivity that is less than the firstresistivity; and configuring a programming circuit to control a value ofa programming current through the fuse element responsively to a bodyregion of a programming element wherein the body region of theprogramming element is formed from substantially the semiconductormaterial and wherein the programming current increases the resistance ofthe fuse element.
 14. The method of claim 13 further including formingthe programming element with a third resistivity that is substantiallyequal to the first resistivity.
 15. The method of claim 13 furtherincluding forming at least the body region of the programming elementsubstantially devoid of a silicide material.
 16. The method of claim 13further including forming the body region of the programming elementfrom the semiconductor material that is substantially devoid of asilicide material.
 17. The method of claim 13 wherein configuring theprogramming circuit to control the value of the programming currentincludes configuring the programming circuit to cause electro-migrationof silicide material and increase the resistance of the fuse element.18. The method of claim 13 wherein configuring the programming circuitto control the value of the programming current includes configuring theprogramming circuit to form the value of the programming current toresult in a current density in the body region of the fuse element thatcauses electro-migration of silicide material.
 19. The method of claim13 wherein configuring the programming circuit to control the value ofthe programming current includes configuring the programming circuit tocontrol the value of the programming current to result in a currentdensity in the body region of the fuse element that causeselectro-migration of dopants in the body region of the fuse element. 20.The method of claim 13 wherein configuring the programming circuit tocontrol the value of the programming current includes configuring theprogramming circuit to form the value of the programming current toresult in a current density of approximately 1E7 to 1E8 amps/cm² in thebody region of the fuse element.